EMX28 Datasheet, PDF (1/2 Pages) Rohm – Low frequency transistor, complex (2-elements) Bipolar Transistor

Transistors
EMX28
Low frequency transistor,
complex (2-elements) Bipolar Transistor
EMX28
zStructure
NPN Silicon Epitaxial Planar Transistor
zFeatures
1) Two 2SD2696 dies are incorpolated in the EMT6 package.
2) Collector saturation voltage is low.
VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA
zApplications
General purpose small signal amplifier
zPackaging specifications
Type
EMX28
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zExternal dimensions (Unit : mm)
EMT6
1.6
0.5
1.0
0.5 0.5
(6) (5) (4)
1pin mark (1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : X28
zInner circuit
(6) (5) (4)
zAbsolute maximum ratings (Ta=25°C)
<Tr1, Tr2>
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current
Power dissipation
IC
ICP ^∗1
PD ^∗2
400
mA
800
mA
150
mW / TOTAL
120
mW / ELEMENT
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw=10ms, Single pulse
∗2 Each terminal mounted on a recommended land.
(1) (2) (3)
zElectrical characteristics (Ta=25°C)
<Tr1, Tr2>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-emitter breakdown voltage BVCEO 30
−
−
V IC=1mA
Collector-base breakdown voltage BVCBO 30
−
−
V IC=10µA
Emitter-base breakdown voltage
BVEBO
6
−
−
V IE=10µA
Collector cut-off current
ICBO
−
− 100 nA VCB= 30V
Emitter cut-off current
IEBO
−
− 100 nA VEB= 6V
Collector-emitter saturation voltage VCE (sat) − 120 300 mV IC=100mA, IB= 2mA
DC current gain
hFE 270 − 680 − VCE=2V, IC=100mA
Transition frequency
Output capacitance
fT
− 400 − MHz VCE=2V, IE= −100mA, f=100MHz
Cob
− 3.0 − pF VCB=10V, IE= 0A, f=1MHz
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