EMT2 Datasheet, PDF (1/1 Pages) Rohm – General purpose (dual transistors)

Transistors
EMT2 / EMT3 / UMT2N / IMT2A / IMT3A
General purpose (dual transistors)
EMT2 / EMT3 / UMT2N / IMT2A / IMT3A
!Features
1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
!Equivalent circuits
EMT2 / UMT2N
IMT2A
EMT3
IMT3A
(3) (2)
(1)
(4) (5)
(6)
(3) (2) (1)
(4) (5) (6)
(4) (5) (6)
(3) (2) (1)
(4)
(5) (6)
(3)
(2)
(1)
!External dimensions (Units : mm)
EMT2 / EMT3
(4)
(3)
(5)
(2)
(6)
(1)
1.2
1.6
ROHM : EMT6
UMT2N
Each lead has same dimensions
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMT2 / EMT3 / UMT2N
IMT2A / IMT3A
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−60
−50
−6
150
150(TOTAL)
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
1.25
2.1
0.1Min.
ROHM : UMT6
EIAJ : SC-88
IMT2A / IMT3A
Each lead has same dimensions
!Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMT2
EMT6
T2
T2R
8000
EMT3
EMT6
T3
T2R
8000
UMT2N
UMT6
T2
TR
3000
IMT2A
SMT6
T2
T108
3000
IMT3A
SMT6
T3
T108
3000
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
−60
−
−
V
IC=−50µA
−50
−
−
V
IC=−1mA
−6
−
−
V
IE=−50µA
−
−
−0.1
µA VCB=−60V
−
−
−0.1
µA VEB=−6V
−
−
−0.5
V
IC/IB=−50mA/−5mA
120
−
560
−
VCE=−6V, IC=−1mA
−
140
−
MHz VCE=−12V, IE=2mA, f=100MHz ∗
−
4
5
pF VCE=−12V, IE=0A, f=1MHz