EMF33 Datasheet, PDF (1/3 Pages) Rohm – Power management, Dual-chip Bipolar Transistor

Transistors
Power management,
Dual-chip Bipolar Transistor
EMF33
EMF33
zApplications
Power management circuit
zFeatures
1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are
housed independently in the EMT6 package.
2) Power switching circuit in a single package.
3) Mounting cost and area can be cut in half.
zStructure
Epitaxial Plannar Silicon Transistor
zDimensions (Unit : mm)
EMT6
1.6
0.5
1.0
0.5 0.5
(6) (5) (4)
1pin mark (1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : F33
zPackaging specifications
zEquivalent circuit
Type
EMF33
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
<Tr1>
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
−12
V
Input voltage
Collector current
VIN
−10 to +5
V
IC(max) ^∗
−500
mA
∗ Characteristics of built-in transistor.
<Tr2>
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Drain current
Continous
ID
100
Pulsed
IDP ^∗
200
mA
mA
Continous
IDR
100
mA
Reverse drain current
Pulsed
IDRP ∗
200
mA
∗ PW≤10ms DUTY CYCLE≤50%
(6)
(5)
(4)
∗1
Tr1
R2
R1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
Tr1 : R1/R2=1kΩ/10kΩ
Tr2 : MOS FET
Tr2
∗2
(1) Emitter
(2) Base
(3)
(3) Drain
(4) Source
(5) Gate
(6) Collector
<Tr1, Tr2 in common>
Parameter
Power dissipation
Symbol
PD ^∗
Junction temperature
Tj
Range of storage temperature
Tstg
∗ Each terminal mounted on a recommended land.
Limits
150
120
150
−55 to +150
Unit
mW / TOTAL
mW / ELEMENT
°C
°C
1/2