EMA4 Datasheet, PDF (1/2 Pages) Rohm – General purpose (dual digital transistors)

Transistors
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
General purpose (dual digital transistors)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
!Features
1) Two DTA114T chips in a EMT or UMT or SMT package.
!Equivalent circuit
EMA4 / UMA4N
(3) (2) (1)
R1
R1
FMA4A
(3) (4) (5)
R1
R1
(4)
(5)
(2)
(1)
EMB4 / UMB4N
(3) (2) (1)
R1
R1
(4) (5) (6)
IMB4A
(4) (5) (6)
R1
R1
(3) (2) (1)
UMB8N
(3) (2)
(1)
R1
R1
(4) (5) (6)
IMB8A
(4) (5)
(6)
R1
R1
(3) (2) (1)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N
dissipation _{FMA4A / IMB4A / IMB8A}
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
−50
−50
−5
−100
150(TOTAL)
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R1
Min.
Typ.
Max.
Unit
Conditions
−50
−
−
V
IC=−50µA
−50
−
−
V
IC=−1mA
−5
−
−
V
IE=−50µA
−
−
−0.5
µA VCB=−50V
−
−
−0.5
µA VEB=−4V
−
−
−0.3
V
IC/IB=−10mA/−1mA
100
250
600
−
VCE=−5V, IC=−1mA
−
250
−
MHz VCE=−10V, IE=5mA, f=100MHz ∗
7
10
13
kΩ
−
!Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMA4
EMT5
A4
T2R
8000
UMA4N
UMT5
A4
TR
3000
EMB4
EMT6
B4
T2R
8000
UMB4N
UMT6
B4
TN
3000
UMB8N
UMT6
B8
TR
3000
FMA4A
SMT5
A4
T148
3000
IMB4A
SMT6
B4
T110
3000
IMB8A
SMT6
B8
T108
3000