EM6K6 Datasheet, PDF (1/4 Pages) Rohm – 1.8V Drive Nch+Nch MOSFET

Transistor
1.8V Drive Nch+Nch MOSFET
EM6K6
EM6K6
zStructure
Silicon N-channel
MOSFET
zDimensions (Unit : mm)
EMT6
zApplications
Switching
zFeatures
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
Each lead has same dimensions
Abbreviated symbol : K06
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
EM6K6
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
Total power dissipation
PD^∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land.
zEquivalent circuit
Gate
(6)
(5) _Protection (4)
Diode
∗
Tr1
Limits
20
±8
±300
±600
150
120
150
−55 to +150
Unit
V
V
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
Tr2
(1)Tr1 Source
(2)Tr1 Gate
∗
Gate
(1) ^Protection (2)
Diode
(3)Tr2 Drain
(4)Tr2 Source
(3)
(5)Tr2 Gate
(6)Tr1 Drain
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
833
1042
Unit
°C/W / TOTAL
°C/W / ELEMENT
1/3