EM6K34 Datasheet, PDF (1/6 Pages) Rohm – 0.9V Drive Nch + Nch MOSFET

0.9V Drive Nch + Nch MOSFET
EM6K34
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
EMT6
Features
1) High speed switing.
2) Small package(EMT6).
3)Ultra low voltage drive(0.9V drive).
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : K34
 Application
Switching
 Inner circuit
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
EM6K34
Taping
T2R
8000

 Absolute maximum ratings (T_a = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
Power dissipation
P_D ^*2
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Tch
Tstg
Limits
50
8
200
800
125
800
150
120
150
55 to +150
Unit
V
V
mA
mA
mA
mA
mW / TOTAL
mW / ELEMENT
C
C
(6)
(5)
(4)
∗1
∗2
∗2
(1) Tr1 Source
∗1
(2) Tr1 Gate
(1)
(2)
(3) Tr2 Drain
(3) _{(4) Tr2 Source}
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
 Thermal resistance
Parameter
Channel to Ambient
Symbol
Rth (ch-a)^*
* Each terminal mounted on a recommended land.
Limits
833
1042
Unit
C/ W /TOTAL
C/ W /ELEMENT
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2010.11 - Rev.A