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EM6K33 Datasheet, PDF (1/6 Pages) Rohm – 1.2V Drive Nch + Nch MOSFET
1.2V Drive Nch + Nch MOSFET
EM6K33
Structure
ilicon N-channel MOSFET
Dimensions (Unit : mm)
Features
1) High speed switing.
2) Small package(EMT6).
3) Ultra low voltage drive(1.2V drive).
Application
Switching
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Packaging specifications
Package
Type Code
Taping
T2R
Basic ordering unit (pieces) 8000
EM6K33
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Absolute maximum ratings (Ta = 25C)
Parameter
Symbol

Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
50
8
200
800
125
800
150
120
Channel temperature
Tch
150
Range of storage temperature
Tstg 55 to +150
Abbreviated symbol : K33
Inner circuit
(6)
(5)
(4)
∗1
∗2
∗2
(1) Tr1 Source
∗1
(2) Tr1 Gate
(1)
(2)
(3) Tr2 Drain
(3) (4) Tr2 Source
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
Unit
V
V
mA
mA
mA
mA
mW / TOTAL
mW / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
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Thermal resistance
Parameter
Symbol
Limits

Unit
Channel to ambient
Rth (ch-a)*
833
1042
°C / W /TOTAL
°C / W /ELEMENT
* Each terminal mounted on a recommended land.
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2010.03 - Rev.B