EM6K31T2R Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch + Nch MOSFET

2.5V Drive Nch + Nch MOSFET
EM6K31
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
Features
1) High speed switing.
2) Small package(EMT6).
3) Low voltage drive(2.5V drive).
 Application
Switching
65 4
Abbreviated symbol : K31
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
EM6K31
Taping
T2R
8000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
60
20
250
1
125
1
P_D ^*2
150
120
Tch
150
Tstg 55 to +150
V
V
mA
A
mA
A
mW / TOTAL
mW / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Inner circuit
(6)
(5)
(4)
∗1
∗2
∗2
(1) Tr1 Source
∗1
(2) Tr1 Gate
(1)
(2)
(3) Tr2 Drain
(3) _{(4) Tr2 Source}
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
 Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)^*
* Each terminal mounted on a recommended land.
Limits
833
1042
Unit
°C / W /TOTAL
°C / W /ELEMENT
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2010.09 - Rev.B