EM6K1_1 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+Nch MOS FET

Transistor
2.5V Drive Nch+Nch MOS FET
EM6K1
EM6K1
zStructure
Silicon N-channel MOS FET
zFeatures
1) Two 2SK3019 transistors in a single EMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
zExternal dimensions (Unit : mm)
EMT6
1.6
0.5
1.0
0.5 0.5
(6) (5) (4)
1pin mark (1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : K1
zApplications
Interfacing, switching (30V, 100mA)
zPackaging specifications
Type
EM6K1
Package
Code
Basic ordering unit
(pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
Total power dissipation
PD^∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Limits
30
±20
±100
±400
150
120
150
−55 to +150
zEquivalent circuit
(6)
(5)
Gate
Protection ⁽⁴⁾
Diode
∗
Tr1
Tr2
(1)Tr1 Source
(2)Tr1 Gate
∗
Gate
(1) ^Protection (2)
Diode
(3)Tr2 Drain
(4)Tr2 Source
(3)
(5)Tr2 Gate
(6)Tr1 Drain
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Unit
V
V
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
Rev.C
1/3