DTDG23YP_1 Datasheet, PDF (1/3 Pages) Rohm – 1A / 60V Digital transistor (with built-in resistors and zener diode)

Transistors
DTDG23YP
1A / 60V Digital transistor
(with built-in resistors and zener diode)
DTDG23YP
zApplications
Inverter, Interface, Driver
zFeatures
1) High DC current gain. (Min. 300 at V_O / I_O=2V /
0.5A)
2) Low Vo(on). (Typ. 0.4V at I_O / I_I=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L-load (an inductive load).
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistors and zener diode)
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
(1)Base
(2)Collector
(3)Emitter
3.0
Abbreviated symbol : E02
zPackaging specifications
Package
Packaging type
Code
Part No. Basic ordering unit (pieces)
DTDG23YP
MPT3
Taping
T100
1000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
VCC
60±10
V
VIN
−6 to +40
Collector current
IC
1
A
ICP
2 ∗1
A
Power dissipation
Pd
1.5 ∗2
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Pw ^<−10ms, Duty cycle ^<− 2%
∗2 When mounted on 40 40 0.7mm ceramic board.
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Emitter-base resistance
∗ ^{Characteristics of built-in transistor}
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT ∗
R1
R2
Min.
−
2
−
−
−
300
−
1.54
7
Typ.
−
−
−
−
−
−
80
2.2
10
zEquivalent circuit
R1
IN
R2
IN
OUT
GND
OUT
GND
R1=2.2kΩ R2=10kΩ
Max.
0.3
−
0.4
3.6
0.5
−
−
2.86
13
Unit
V
V
mA
µA
−
MHz
kΩ
kΩ
Conditions
VCC=5V , IO=100µA
VO=0.4V , IO=100mA
IO/II=500mA/5mA
VI=5V
VCC=40V , VI=0V
VO=2V , IO=500mA
VCE=5V , IE= −0.1A , f=30MHz
−
−
Rev.B
1/2