DTDG14GPT100 Datasheet, PDF (1/3 Pages) Rohm – 1A / 60V Digital Transistor (with built-in resistor and zener diode)

Transistors
DTDG14GP
1A / 60V Digital Transistor
(with built-in resistor and zener diode)
DTDG14GP
zApplications
Driver
zFeatures
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A)
2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
zPackaging specifications
Package
Packaging type
Code
Part No.
Basic ordering
unit (pieces)
DTDG14GP
MPT3
Taping
T100
1000
zExternal dimensions (Unit : mm)
4.5
1.6
1.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : E01
0.4
(1) Base
(2) Collector
(3) Emitter
zEquivalent circuit
(1)
R
(1) : Base
(2) : Collector
(3) : Emitter
(2)
(3)
R=10kΩ
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60±10
V
Collector-emitter voltage
VCEO
60±10
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
ICP
2 ∗1
A
Collector power dissipation
PC
0.5
W
2 ∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
Rev.A
1/2