DTDG14GP Datasheet, PDF (1/2 Pages) Rohm – Digital transistor built in resistor and zener diode Driver 60V, 1A

Transistors
DTDG14GP
Digital transistor (built in resistor and
zener diode) Driver (60V, 1A)
DTDG14GP
!Features
1) High hFE.
(typ. hFE =750 VCE/IC=2V/0.5A)
2) Low saturation voltage,
VCE(sat)=0.4V
(IC/IB=500mA/5mA)
3) Built-in zener diode to protect the
transistor against reverse voltages
when connected to alow load.
!Structure
NPN digital transistor
(with single built resistor and zener
diode)
!External dimensions (Units : mm)
4.5^{+−00..21}
1.6±0.1
1.5_{−+00..12}
ROHM : MPT3
EIAJ : SC-62
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
Abbreviated symbol : E01
0.4_{−+00..015}
(1) Base
(2) Collector
(3) Emitter
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
Limits
60±10
60±10
5
1
2
0.5
2
150
−55~+150
Unit
V
V
V
A
A(Pulse) ∗1
W
∗2
°C
°C
!Equivalent circuit
(1)
R
(1) : Base
(2) : Collector
(3) : Emitter
(2)
(3)
R=10kΩ