DTD743XE_11 Datasheet, PDF (1/3 Pages) Rohm – 200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)

200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD743XE / DTD743XM
Applications
Inverter, Interface, Driver
Feature
1) VCE(sat) is lower than the conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
Dimensions (Unit : mm)
DTD743XE
1.6
0.7
0.3
0.55
(3)
(2) (1)
0.2
0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M43
DTD743XM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M43
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
DTD743XE DTD743XM
Supply voltage
VCC
30
V
Input voltage
VIN
−7 to +20
V
Collector current
∗1
IC (max)
200
mA
Power dissipation ^∗2
PD
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Packaging specifications
Package
Packaging type
Code
EMT3
Taping
TL
Part No.
Basic ordering
unit (pieces)
3000
DTD743XE
DTD743XM
−
VMT3
Taping
T2L
8000
−
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max.
Input voltage
VI(off)
−
− 0.3
VI(on)
2.5
−
−
Output voltage
VO(on)
−
70 300
Input current
II
−
− 1.4
Output current
IO(off)
−
− 500
DC current gain
Transition frequency ∗
GI
140
−
−
fT
− 260 −
Input resistance
R1 3.29 4.7 6.11
Resistance ratio
R2/R1 1.7 2.1 2.6
∗ Characteristics of built-in transistor.
Unit
V
mV
mA
nA
−
MHz
kΩ
−
Conditions
VCC= 5V, IO= 100μA
VO= 0.3V, IO= 20mA
IO/II= 50mA / 2.5mA
VI= 5V
VCC= 30V, VI=0V
VO= 2V, IO= 100mA
VCE= 10V, IE= −5mA, f=100MHz
−
−
Equivalent circuit
R1
IN
R2
OUT
GND
IN
OUT
GND
R1=4.7kΩ / R2=10kΩ
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2011.11 - Rev.B