DTD723YE_09 Datasheet, PDF (1/3 Pages) Rohm – 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)

200mA / 30V Low V_CE (sat) Digital transistors
(with built-in resistors)
DTD723YE / DTD723YM
zApplications
Inverter, Interface, Driver
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of
almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
zStructure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
zDimensions (Unit : mm)
DTD723YE
1.6
0.7
0.3
0.55
(3)
(2) (1)
0.2
0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M62
DTD723YM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Abbreviated symbol : M62
zPackaging specifications
Package
EMT3
Packaging type Taping
Code
TL
Part No.
Basic ordering
unit (pieces)
3000
DTD723YE
DTD723YM
−
VMT3
Taping
T2L
8000
−
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
DTD723YE DTD723YM
Supply voltage
VCC
30
V
Input voltage
VIN
−5 to +15
V
Collector current
∗1
IC (max)
200
mA
Power dissipation ^∗2
PD
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
zInner circuit
R1
IN
R2
OUT
GND
IN
OUT
GND
R1=2.2kΩ / R2=10kΩ
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2009.05 - Rev.B