DTD713ZE Datasheet, PDF (1/2 Pages) Rohm – 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)

Transistors
DTD713ZE / DTD713ZM
200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD713ZE / DTD713ZM
zApplications
Inverter, Interface, Driver
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the device design easy.
zStructure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
zExternal dimensions (Unit : mm)
DTD713ZE
1.6
0.7
0.3
0.55
(3)
(2) (1)
0.2
0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : P21
DTD713ZM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Abbreviated symbol : P21
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
DTD713ZE DTD713ZM
Supply voltage
VCC
30
V
Input voltage
VIN
−5 to +10
V
Collector current
∗1
IC (max)
200
mA
Power dissipation ^∗2
PD
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
zPackaging specifications
Package
Packaging type
Code
EMT3
Taping
TL
Part No.
Basic ordering
unit (pieces)
3000
DTD713ZE
DTD713ZM
−
VMT3
Taping
T2L
8000
−
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Input voltage
VI(off)
−
−
VI(on)
2.5
−
Output voltage
VO(on)
−
70
Input current
II
−
−
Output current
IO(off)
−
−
DC current gain
Transition frequency ∗
GI
140
−
fT
− 260
Input resistance
R1
0.7 1.0
Resistance ratio
R2/R1 8.0 10
∗ Characteristics of built-in transistor.
Max.
0.3
−
300
6.4
0.5
−
−
1.3
12
Unit
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
IO/II=50mA / 2.5mA
VI= 5V
VCC= 30V, VI=0V
VO= 2V, IO= 100mA
VCE= 10V, IE= −5mA, f=100MHz
−
−
zEquivalent circuit
R1
IN
R2
OUT
GND
IN
OUT
GND
R1=1.0kΩ / R2=10kΩ
1/1