DTD543XE Datasheet, PDF (1/2 Pages) Rohm – 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

Transistors
DTD543XE / DTD543XM
500mA / 12V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD543XE / DTD543XM
zApplications
Inverter, Interface, Driver
zFeature
1) VCE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors
(see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
zExternal dimensions (Unit : mm)
DTD543XE
1.6
0.7
0.3
0.55
(3)
(2) (1)
0.2
0.2
0.5 0.5
EMT3
1.0
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.15
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Addreviated symbol : X43
DTD543XM
VMT3
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
Each lead has same dimensions
Addreviated symbol : X43
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
DTD543XE DTD543XM
Supply voltage
VCC
12
V
Input voltage
VIN
−7 to +12
V
Collector current
∗1
IC (max)
500
mA
Power dissipation
PD
Junction temperature ^∗2
Tj
150
mW
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
zPackaging specifications
Package
Packaging type
Code
EMT3
Taping
TL
Part No.
Basic ordering
unit (pieces)
3000
DTD543XE
DTD543XM
−
VMT3
Taping
T2L
8000
−
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ.
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency ∗
VI(off)
−
−
VI(on)
2.5
−
VO(on)
−
60
II
−
−
IO(off)
−
−
GI
140
−
fT
− 260
Input resistance
R1 3.29 4.7
Resistance ratio
R2/R1 1.7 2.1
∗ Characteristics of built-in transistor.
Max.
0.3
−
300
1.4
500
−
−
6.11
2.6
Unit
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 2mA
IO/II= 100mA / 5mA
VI= 5V
VCC= 12V, VI=0V
VO= 2V, IO= 100mA
VCE= 10V, IE=−5mA, f=100MHz
−
−
zEquivalent circuit
R1
IN
R2
OUT
GND
IN
OUT
GND
R1=4.7kΩ / R2=10kΩ
Rev.A
1/1