DTD143EK_1 Datasheet, PDF (1/3 Pages) Rohm – 500mA / 50V Digital transistors (with built-in resistors)

Transistors
DTD143EK / DTD143EC / DTD143ES
500mA / 50V Digital transistors
(with built-in resistors)
DTD143EK / DTD143EC / DTD143ES
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin film resistors with
complete isolation to allow negative biasing
of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
zPackaging specifications
Package
SMT3 SST3 SPT
Packaging type
Taping Taping Taping
Code
T146 T116 TP
Part No. _{Basic ordering unit (pieces)} 3000 3000 5000
DTD143EK
−
−
DTD143EC
−
−
DTD143ES
−
−
zExternal dimensions (Unit : mm)
DTD143EK
2.9
1.1
0.4
0.8
(3)
ROHM : SMT3
EIAJ : SC-59
DTD143EC
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
Abbreviated symbol : F23
2.9
0.4
(3)
0.95
0.45
ROHM : SST3
DTD143ES
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : R23
4.0
2.0
ROHM : SPT
EIAJ : SC-72
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Abbreviated symbol : D143ES
(1) GND
(2) IN
(3) OUT
(1) GND
(2) IN
(3) OUT
(1) GND
(2) OUT
(3) IN
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
DTD143EK DTD143EC DTD143ES
Supply voltage
VCC
50
V
Input voltage
VIN
−10 to +30
V
Output current
IC
500
mA
Power dissipation
PD
200
300
mW
Junction temperature
Tj
150
°C
Storage temperature Tstg
−55 to +150
°C
zEquivalent circuit
R1
IN
R2
OUT
GND
IN
R1=R2=4.7kΩ
GND
OUT
Rev.B
1/2