DTD123EK_1 Datasheet, PDF (1/3 Pages) Rohm – 500mA / 50V Digital transistors (with built-in resistors)

Transistors
DTD123EK / DTD123ES
500mA / 50V Digital transistors
(with built-in resistors)
DTD123EK / DTD123ES
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
zExternal dimensions (Unit : mm)
DTD123EK
2.9
1.1
0.4
0.8
(3)
(2)
(1)
0.95 0.95
1.9
ROHM : SMT3
EIAJ : SC-59
0.15
(1) GND
(2) IN
(3) OUT
Each lead has same dimension
Abbreviated symbol: F22
DTD123ES
4.0
2.0
zPackage specifications
Package
Packaging type
Code
Part No. Basic ordering unit (pieces)
DTD123EK
DTD123ES
SMT3
Taping
T146
3000
−
SPT
Taping
TP
5000
−
0.45
ROHM : SPT
EIAJ : SC-72
2.5
5.0
(1) (2) (3)
0.5 0.45
(1) GND
(2) OUT
(3) IN
Taping specifications
Abbreviated symbol: D123ES
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
DTD123EK DTD123ES
Supply voltage
VCC
50
V
Input voltage
VIN
−10 to +12
V
Output current
IC
500
mA
Power dissipation
Pd
200
300
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
zEquivalent circuit
R1
IN
R2
OUT
GND
IN
OUT
GND
R1=R2=2.2kΩ
Rev.B
1/2