DTC343TK Datasheet, PDF (1/3 Pages) Rohm – Digital transistors (built-in resistor)

Transistors
DTC343TK / DTC343TS
Digital transistors (built-in resistor)
DTC343TK / DTC343TS
zFeatures
zCircuit schematic
In addition to the features of regular digital transistors,
1) Low V_CE(sat) makes these transistors ideal for muting
B
C
circuits. (Typ. 0.04V at I_C/I_B=50/2.5mA)
2) They can be used at high current. (I_CMax. =600mA)
R1
E
E : Emitter
C : Collector
B : Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
DTC343TK
DTC343TS
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
30
V
VCEO
15
V
VEBO
5
V
IC
600
mA
200
Pc
mW
300
Tj
150
C
Tstg
−55 to +150
C
zPackage, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC343TK
SMT3
H03
T146
3000
DTC343TS
SPT
−
TP
5000
zExternal characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Output on resistance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Ron
Min.
30
15
5
−
−
−
100
3.29
−
−
Typ.
−
−
−
−
−
40
250
4.7
200
0.95
Max.
−
−
−
0.5
0.5
80
600
6.11
−
−
Unit
V
V
V
µA
µA
mV
−
kΩ
MHz
Ω
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=20V
VEB=4V
IC=50mA , IB=2.5mA
IC=50mA , VCE=5V
−
VCE=10V , IE= −50mA , f=100MHz ∗
VI=7V , R=1kΩ , f=1kHz
Rev.A
1/2