DAP222M Datasheet, PDF (1/3 Pages) Rohm – Switching diode

Diodes
Switching diode
DAP222M
DAP222M
zApplication
Ultra high speed switching
zFeatures
1) Ultra small mold type. (VMD3)
2) High reliability.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
1.2±0.1
0.32±0.05
(3)
0.13±0.05
0.22±0.05
(1)
(2)
0.22±0.05
0.4
0.4
0～0.1
0.5±0.05
zLand size figure (Unit : mm)
0.8
0.5
0.4
0.4
VMD3
zStructure
ROHM : VMD3
dot (year week factory)
zTaping specifications (Unit : mm)
4.0±0.07
2.0±0.04
φ1.55±0.05
0.3±0.1
1.3±0.05
　　　 0
(4.0±0.1)
2.0±0.05
φ0.5±0.05
0.6±0.05
0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single）
Average rectified forward current (Single)
Surge current （t=1us）
Power dissipation
Junction temperature
Storage temperature
Symbol
V_RM
V_R
I_FM
Io
I_surge
Pd
Tj
Tstg
Limits
80
80
300
100
4
150
150
-55 to +150
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Forward voltage
V_F
-
-
1.2
V
Reverse current
I_R
-
-
0.1
µA
Capacitance between terminal
Ct
-
-
3.5
pF
Reverse recovery time
trr
-
-
4
ns
Unit
V
V
mA
mA
A
mW
℃
℃
Conditions
I_F=100mA
V_R=70V
V_R=6V , f=1MHz
V_R=6V , IF=5mA , RL=50Ω
Rev.B
1/2