DAN235ETL Datasheet, PDF (1/6 Pages) Rohm – Band Switching Diode

Data Sheet
Band Switching Diode
DAN235E
Applications
High frequency switching
Features
1)Ultra small mold type. (EMD3)
2)High reliability
Construction
Silicon epitaxial
Dimensions (Unit : mm)
1.6±0.2
0.3±0.1
　　　 0.05
(3)
0.15±0.05
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
0.2±0.1
(2)
(1)
　　-0.05
0.5 0.5
1.0±0.1
0～0.1
0.6 0.6
0.55±0.1
0.7±0.1
EMD3
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φφ1.15.55±00..1
　　　　　00
0.3±0.1
1.8±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
Pd
150
mW
Reverse voltage (DC)
V_R
35
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to 125
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Capacitance between terminals
Ct
-
Forward resistance
rf
-
Typ.
-
-
-
-
Max.
1.0
10
1.2
0.9
Unit
Conditions
V
I_F=10mA
nA
V_R=25V
pF
V_R=6V , f=1MHz
Ω
I_F=2mA , f=100MHz
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2011.06 - Rev.C