DAN222M_11 Datasheet, PDF (1/3 Pages) Rohm – Switching Diode

Data Sheet
Switching Diode
DAN222M
Applications
Ultra high speed switching
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
1.2±0.1
0.32±0.05
(3)
0.13±0.05
0.22±0.05
(1)
(2)
0.22±0.05
0.4
0.4
0～0.1
0.5±0.05
Land size figure (Unit : mm)
0.8
0.5
0.4
0.4
VMD3
Structure
ROHM : VMD3
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.07
2.0±0.04
φ1.55±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak) V_RM
Reverse voltage (DC)
V_R
Forward voltage (Single)
I_FM
Average rectified forward current (Single)
Io
Surge current (t=1us)
Power dissipation
I_surge
Pd
Junction temperature
Tj
Storage temperature
Tstg
1.3±0.05
　　　 0
Limits
80
80
300
100
4
150
150
55 to 150
(4.0±0.1)
2.0±0.05
φ0.5±0.05
Unit
V
V
mA
mA
A
mW
°C
°C
0.6±0.05
0
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
V_F
-
Reverse current
I_R
-
Capacitance between terminals
Ct
-
-
1.2
-
0.1
-
3.5
Reverse recovery time
trr
-
-
4
Unit
Conditions
V
I_F=100mA
μA
V_R=70V
pF
V_R=6V , f=1MHz
ns
V_R=6V , IF=5mA , RL=50
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B