DAN217WM Datasheet, PDF (1/6 Pages) Rohm – Switching Diode

Switching Diode
DAN217WM
Data Sheet
lApplication
High frequency switching
lFeatures
1) Ultra small mold type
(EMD3F)
2) High reliability
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
1.60
0.26
0.70
lLand size figure (Unit : mm)
1.0
0.5 0.5
0.7
0~
0.10
ROHM : EMD3F
JEDEC :
JEITA : SC-89
Each lead ^0.13
has same
dimensions
dot (year week factory)
lTaping specifications (Unit : mm)
EMD3F
0.6
0.6
lStructure
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
80
V
Reverse voltage (DC)
V_R
80
V
Forward voltage(repetitive peak) I_FM
300
mA
Average rectified forward current I_o
100
mA
Surge current (t=1us)
I_surge
4
A
Power dissipation
Pd
150
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg
-55 to +150
°C
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol Min.
Forward voltage
Reverse current
V_F
-
I_R
-
Capacitance between terminals
C_t
-
Reverse recovery time
trr
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
Conditions
V I_F=100mA
mA V_R=70V
pF V_R=6V, f=1MHz
ns V_R=6V, I_F=5mA, RL=50W
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2014.05 - Rev.A