DA227 Datasheet, PDF (1/3 Pages) Diodes Incorporated – Ultra high speed switching

Diodes
Switching diode
DA227
DA227
zApplications
Ultra high speed switching
zFeatures
1) Small mold type. (UMD4)
2) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
2.0±0.2
0 . 2 5± ^0.1
0.05
各リードとも
Each_同le_寸 ad_法has same dimension
(3)
(2)
0.15±0.05
(4)
(1)
0.65
0.65
1.3±0.1
0～0.1
0.7
0.9±0.1
ROHM : UMD4
JEDEC : SOT-343
JEITA : SC-82
dot (year week factory)
1Pin Mark
z Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
z Land size figure (Unit : mm)
0.7
0.6
0.05
1.3
UMD4
z Structure
0.3±0.1
2.2±0.1
4.0±0.1
φ1.1±0.1
1.15±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
80
V
Reverse voltage (DC)
V_R
80
V
Peak reverse voltage (single)
I_FM
300
mA
Average rectified forward current (single)
Io
100
mA
Surge current （t=1us）
I_surge
4
A
Power dissipation
Pd
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
1.2
Reverse current
I_R
-
-
0.1
Capacitance between terminals Ct
-
-
3.5
Reverse recovery time
trr
-
-
4
Unit
Conditions
V
I_F=100mA
µA
V_R=70V
pF
V_R=6V , f=1MHz
ns
V_R=6V , IF=5mA , RL=50Ω
Rev.A
1/2