BU8332CKV-M Datasheet, PDF (1/29 Pages) Rohm – Directional Microphone Function

Datasheet
Beam-forming
Signal Processing IC
for Ultra- Directional Microphone Effect
BU8332CKV-M
Automotive Grade
General Description
BU8332CKV-M enables cardioid directivity through
beam-forming technology using two omnidirectional
microphones placed 10mm apart. Beam forming
technology provides sharper directivity than
unidirectional microphones. Features include selection
of different polar patterns of response, adjustable
sharpness of directivity via zoom function and switchable
direction sensitivity. The processor enables hands-free
calling and improves speech recognition in a variety of
devices.
Features
■ Directional Microphone Function (Beam-forming)
■ Microphone Pitch: 10mm
■ Selectable Polar Patterns of Response
■ Adjustable Sharpness of Directivity
■ Switchable Direction Sensitivity
■ Digital Block Powered by Internal 1.5V Regulator
■ Built-in Microphone Bias and Pre-amplifier
■ Analog Microphone Inputs (Differential or Single
Ended)x 2ch
■ Analog Line Output
■ PCM Output
■ 2-wire Host Interface(Slave Address : 0x61)
■ Stand-alone Operation with External EEPROM
Typical Application Circuit
Applications
■ Hands-free Operation / Speech Recognition
in Car Navigation Systems
■ Portable Devices such as Mobile Phones,
Smart Phones, Headset, or Game Machines
■ Applications that Require Voice Input
Key Specifications
 Operating Power Supply Range:
3.0V to 3.6V
 Operating Temperature Range: -40℃ to +85℃
 Operating Current:
15mA(Typ)
 Deep Standby Current:
1μA(Typ)
 Polar Pattern Type:
“Cardioid”, “Bidirectional”, “Hyper-cardioid”
Package
VQFP48
W(Typ) x D(Typ) x H(Max)
9.00mm x 9.00mm x 1.625mm
3.3V
2ch mcrophone input
MICIN
MICBIAS1
MICBIAS2
MIC1INP
MIC1INN
MIC2INP
MIC2INN
MIC
BIAS
Regulator
PLL
ADC
DAC
Beam-Forming
ADC
PCM I/F
EEPROM I/F
(SPI)
2-wire
HOST I/F
LR SPICLK SPICSB SPIDI SPIDO
Figure 1 Typical Application Circuit
MCLK
XTLO
LINEOUT
Analog output
LINEOUT
PCMCLK
PCMFS
PCMIN
Digital output
PCMOUT _{PCM I/F}
SCL
SDA
Setting resister
RSTB
○Product structure:Silicon monolithic integrated circuit
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed protection against radioactive rays
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TSZ02201-0V1V0C104570-1-2
2014.10.31 Rev.002