BU52077GWZ Datasheet, PDF (1/20 Pages) Rohm – Omnipolar Detection Hall IC

Datasheet
Omnipolar Detection Hall IC
(Dual Outputs for both S and N Pole Polarity Detection)
BU52077GWZ
General Description
The BU52077GWZ is omnipolar Hall IC incorporating a
polarity determination circuit that enables separate
operation (output) of both the South and North poles.
The polarity judgment is based on the output processing
configuration.
This Hall IC product can be in tablets, smart phones, and
other applications in order to detect open and close of
the cover.
And this Hall IC product can be in digital video cameras
and other applications involving display panels in order
to detect the front/back location or determine the
rotational direction of the panel.
Key Specifications
 VDD Voltage Range:
 Operate Point:
 Hysteresis:
 Period:
 Supply Current (AVG):
 Output Type:
 Operating Temperature Range:
1.65V to 3.6V
±15.0mT(Typ)
0.9mT(Typ)
50ms(Typ)
5.0µA (Typ)
CMOS
-40°C to +85°C
Package
UCSP35L1
W(Typ) x D(Typ) x H(Max)
0.80mm x 0.80mm x 0.40mm
Features
 Omnipolar Detection (Polarity Detection for both S
and N Poles with Separate, Dual Outputs)
 Micro Power Operation (Small Current Using
Intermittent Operation Method)
 Ultra-compact CSP4 Package (UCSP35L1)
 Polarity Judgment and Separate Output on both
Poles
(OUT1=S-pole Output; OUT2=N-pole Output)
 High ESD Resistance 8kV(HBM)
Applications
 Tablets, Smart Phones, Notebook Computers,
Digital Video Cameras, Digital Still Cameras, etc.
Typical Application Circuit, Block Diagram, Pin Configurations and Pin Descriptions
HALL
ELEMENT
×
VDD
B1
TIMING
LOGIC
0.1µF
Adjust the bypass capacitor value
as necessary, according to voltage
noise conditions, etc.
B2 OUT1
GND
VDD
A2 _OUT2
The CMOS output terminals
enable direct connection to
the PC, with no external
pull-up resistor required.
A1
GND
Pin No.
A1
A2
B1
B2
Pin Name
Function
GND
Ground
OUT2
Output (React to the north pole)
VDD
OUT1
Power supply
Output (React to the south pole)
(TOP VIEW)
A1 A2
(BOTTOM VIEW)
A2 A1
B1 B2
B2 B1
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0M2M0F414010-1-2
11.Aug.2014 Rev.001