BU52075GWZ Datasheet, PDF (1/20 Pages) Rohm – Omnipolar Detection Hall IC

Datasheet
Omnipolar Detection Hall IC
(Dual Outputs for both S and N Pole Polarity Detection)
BU52075GWZ
General Description
The BU52075GWZ is omnipolar Hall IC incorporating a
polarity determination circuit that enables separate
operation (output) of both the South and North poles.
The polarity judgment is based on the output processing
configuration.
This Hall IC product can be in tablets, smart phones, and
other applications in order to detect open and close of
the cover.
And this Hall IC product can be in digital video cameras
and other applications involving display panels in order
to detect the front/back location or determine the
rotational direction of the panel.
Key Specifications
 VDD Voltage Range:
 Operate Point:
 Hysteresis:
 Period:
 Supply Current (AVG):
 Output Type:
 Operating Temperature Range:
1.65V to 3.6V
±9.5mT(Typ)
0.9mT(Typ)
50ms(Typ)
5.0µA (Typ)
CMOS
-40°C to +85°C
Package
UCSP35L1
W(Typ) x D(Typ) x H(Max)
0.80mm x 0.80mm x 0.40mm
Features
 Omnipolar Detection (Polarity Detection for both S
and N Poles with Separate, Dual Outputs)
 Micro Power Operation (Small Current Using
Intermittent Operation Method)
 Ultra-compact CSP4 Package (UCSP35L1)
 Polarity Judgment and Separate Output on both
Poles
(OUT1=S-pole Output; OUT2=N-pole Output)
 High ESD Resistance 8kV(HBM)
Applications
 Tablets, Smart Phones, Notebook Computers,
Digital Video Cameras, Digital Still Cameras, etc.
Typical Application Circuit, Block Diagram, Pin Configurations and Pin Descriptions
VDD
B1
0.1µF
HALL
ELEMENT
×
TIMING
LOGIC
B2 ^OUT1
GND
VDD
Adjust the bypass capacitor value
as necessary, according to voltage
noise conditions, etc.
The CMOS output terminals
enable direct connection to
the PC, with no external
pull-up resistor required.
A2 OUT2
A1
GND
Pin No.
A1
A2
Pin Name
GND
OUT2
Function
Ground
Output (React to the north pole)
(TOP VIEW)
A1 A2
(BOTTOM VIEW)
A2 A1
B1
VDD
Power supply
B2
OUT1
Output (React to the south pole)
B1 B2
B2 B1
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0M2M0F414030-1-2
17.Oct.2014 Rev.001