BS2130F-G Datasheet, PDF (1/31 Pages) Rohm – High Voltage 3 Phase Bridge Driver

600V High Voltage
3 Phase Bridge Driver
BS2130F-G
General Description
The BS2130F is a monolithic bridge driver IC, which can
drive N-channel power MOSFET and IGBT driver in 3
phase systems with bootstrap operations.
The floating channel can be used to driven an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 600V.
The logic inputs can be used 3.3V and 5.0V.
To provide a protection circuit, the device Includes an
Under Voltage Lockout (UVLO) circuit and an Over
Current Protection (OCP) circuit.
The UVLO circuit prevents malfunction when VCC and
VBS are lower than the specified threshold voltage.
Key Specifications
 High-side floating supply voltage:
600V
 Output voltage range:
11.5 ~ 20V
 Min Output Current Io+/Io-: 200mA/350mA(Typ)
 OCP detect voltage
0.46V(Typ)
 OCP blanking time
150ns(Typ)
 Turn On/Turn Off:
630/580ns(Typ)
 Offset supply leakage current:
50µA (Max)
 Operating temperature range:
-40°C ~+125°C
Package
SOP-28
W(Typ) x D(Typ) x H(Max)
18.50mm x 9.90mm x 2.41mm
Features
 Floating Channels for Bootstrap Operation to +600V
 Gate drive supply range from 11.5V to 20V
 Built-in Under Voltage Lockout for Both Channels
 The device includes an Over Current Protection circuit
 Built-in Enable Channel (EN) which enable I/O
functionality
 Built-in FAULT Channel (/FAULT) which indicates over
current and under voltage
 RCIN Channel can determine the OCP holding time
by external resistance and capacitance
 3.3V and 5.0V input logic compatible
 Output in phase with input
Applications
 MOSFET and IGBT high side driver applications
Typical Application Circuit
VCC
HIN1,2,3
LIN1,2,3
FAULT
EN
RCIN
ITRIP
VSS
VB1,2,3
HO1,2,3
VS1,2,3
LO1,2,3
COM
Up to 600V
TO LOAD
Figure 1. Typical Application Circuit
○Product structures：Silicon monolithic integrated circuit
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TSZ22111・14・001
○This product is not designed for protection against radioactive rays
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31.May.2016 Rev.002