BS2100F Datasheet, PDF (1/19 Pages) Rohm – Built-in Under Voltage Lockout for Both Channels

600V High voltage
High & Low-side, Gate Driver
BS2100F
General Description
The BS2100F is a monolithic high and low side gate drive
IC, which can drive high speed power MOSFET and IGBT
driver with bootstrap operation.
The floating channel can be used to driven an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 600V.
The logic inputs can be used 3.3V and 5.0V.
The Under Voltage Lockout (UVLO) circuit prevents
malfunction when VCC and VBS are lower than the
specified threshold voltage.
Features
 Floating Channels for Bootstrap Operation to +600V
 Gate drive supply range from 10V to 18V
 Built-in Under Voltage Lockout for Both Channels
 3.3V and 5.0V Input Logic Compatible
 Matched Propagation Delay for Both Channels
 Output in phase with input
Applications
 MOSFET and IGBT high side driver applications
Key Specifications
 High-side floating supply voltage:
600V
 Output voltage range:
10V to 18V
 Min Output Current Io+/Io-:
60mA/130mA
 Turn-on/off time:
220ns(Typ)
 Dead time:
160ns(Typ)
 Delay Matching:
50ns(Max)
 Offset supply leakage current:
50µA (Max)
 Operating temperature range: -40°C to +125°C
Package
SOP-8
5.00mm x 6.20mm x 1.50mm
Typical Application Circuits
VCC
LIN
HIN
LIN
VB
HIN
HO
VCC
VS
COM
LO
Up to 600V
T^TO^O
L^LO^OR^AD^D
Figure 1. Typical Application Circuit
〇Product structure : Silicon monolithic integrated circuit
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TSZ22111・14・001
〇This product has no designed protection against radioactive rays
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TSZ02201-0Q3Q0BZ00260-1-2
2.FEB.2015 Rev.002