BRCA016GWZ-W_13 Datasheet, PDF (1/25 Pages) Rohm – Serial EEPROM Series Standard EEPROM WLCSP EEPROM

Datasheet
Serial EEPROM Series Standard EEPROM
WLCSP EEPROM
BRCA016GWZ-W (16Kbit)
General Description
BRCA016GWZ-W series is a serial EEPROM of I²C BUS Interface Method.
Features
■ Completely conforming to the world standard I²C BUS. All controls available by 2 ports of serial clock (SCL)
and serial data (SDA)
■ Other devices than EEPROM can be connected to the same port, saving microcontroller port.
■ 1.7V to 3.6V Single Power Source Operation most suitable for battery use.
■ Possible FAST MODE 400KHz operation
■ Page Write Mode useful for initial value write at factory shipment.
■ Self-timed Programming Cycle
■ Low Current Consumption
¾ At Write Operation (5V)
: 0.5mA (Typ)
¾ At Read Operation (5V)
: 0.2mA (Typ)
¾ At Standby Operation (5V) : 0.1μA (Typ)
■ Prevention of Write Mistake
¾ Write (write protect) function added
¾ Prevention of write mistake at low voltage
■ UCSP30L1 Compact Package
¾ W(Typ) x D(Typ) x H(Max) :1.30mm x 0.77mm x 0.35mm
■ More than 1 million write cycles
■ More than 40 years data retention
■ Noise Filter Built in SCL / SDA terminal
■ Initial Delivery State FFh
BRCA016GWZ-W
Capacity
Bit Format
Type
Power Source Voltage
Package
16Kbit
2K×8
BRCA016GWZ-W
1.7V to 3.6V
UCSP30L1
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limit
Unit
Remark
Supply Voltage
V_CC
-0.3 to +6.5
V
Permissible Dissipation
Pd
220
mW Derate by 2.2mW/°C when operating above Ta=25°C
Storage Temperature
Operating Temperature
Input Voltage/
Output Voltage
Tstg
-65 to +125
°C
Topr
-40 to +85
°C
-
-0.3 to Vcc+1.0
V
Memory Cell Characteristics (Ta=25°C, Vcc=1.7V to 3.6V)
Parameter
Limit
Min
Typ Max
Write Cycles ⁽¹⁾
100,000 -
-
Unit
Times
Data Retention ⁽¹⁾
(1) Not 100% TESTED
40
-
- Years
○Product structure：Silicon monolithic integrated circuit
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
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TSZ02201-0R2R0G100510-1-2
25.Feb.2013 Rev.002