BR34L02FV-W Datasheet, PDF (1/25 Pages) Rohm – 256® bit Electrically Erasable PROM

Memory ICs
BR34L02FV-W
256×8 bit Electrically Erasable PROM
(based on Serial Presence Detect)
BR34L02FV-W
The BR34L02FV-W is a 2k bit EEPROM memory with write-protect function having independent rewrite inhibit area,
developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is
a memory IC that reads ID in order for the Plug & Play feature to operate.
∗ I²C BUS is a registered trademark of Philips.
z Applications
General purpose
z Features
1) 256k registers × 8 bits serial architecture
2) Single power supply (1.8V to 5.5V)
3) Two wire serial interface
4) Page Write Function (16byte)
5) Write Protect Mode
Write protect 1 (Onetime Rom)
: 00h to 7Fh
Write protect 2 (Hardwire WP PIN)
: 00h to FFh
6) Low Power consumption
Write (5V)
: 1.2mA (Typ.)
Read (5V)
: 0.2mA (Typ.)
Standby (5V) : 0.1µA (Typ.)
7) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
8) Small package - - - - - - SSOP-B8 pin
9) High reliability fine pattern CMOS technology
10) Endurance : 1,000,000 erase/write cycles
11) Data retention : 40years
12) Filtered inputs in SCL•SDA for noise suppression
13) Initial data FFh in all address
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Power dissipation
VCC
−0.3 to +6.5
V
Pd
300(SSOP-B8) ^∗1
mW
Storage temperature
Tstg
−65 to +125
°C
Operating temperature
Topr
−40 to +85
°C
Terminal voltage
−
−0.3 to VCC+0.3
V
∗1 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
Rev.A
1/24