BR34E02FVT-W_09 Datasheet, PDF (1/19 Pages) Rohm – DDR/DDR2 (For memory module) SPD Memory

Memory for Plug & Play
DDR/DDR2
(For memory module) SPD Memory
BR34E02FVT-W, BR34E02NUX-W
●Description
BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
●Features
1) 256×8 bit architecture serial EEPROM
2) Wide operating voltage range: 1.7V-3.6V
3) Two-wire serial interface
4) High reliability connection using Au pads and Au wires
5) Self-Timed Erase and Write Cycle
6) Page Write Function (16byte)
7) Write Protect Mode
Settable Reversible Write Protect Function: 00h-7Fh
Write Protect 1 (Onetime Rom)
: 00h-7Fh
Write Protect 2 (Hardwire WP PIN)
: 00h-FFh
8) Low Power consumption
Write
(at 1.7V ) :
0.4mA (typ.)
Read
(at 1.7V ) :
0.1mA(typ.)
Standby ( at 1.7V ) :
0.1µA(typ.)
9) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
10) Compact package: TSSOP-B8, VSON008X2030
11) High reliability fine pattern CMOS technology
12) Rewriting possible up to 1,000,000 times
13) Data retention: 40 years
14) Noise reduction Filtered inputs in SCL / SDA
15) Initial data FFh at all addresses
●BR34E02-W Series
Capacity
2Kbit
Bit format
256X8
Type
BR34E02-W
Power Source Voltage
1.7V～3.6V
TSSOP-B8
●
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Power Dissipation
Storage Temperature
Operating Temperature
Terminal Voltage (A0)
Terminal Voltage (etcetera)
* Reduce by 3.3mW(*1), 3.0 mW(*2)/C over 25C
Symbol
VCC
Pd
Tstg
Topr
-
-
Rating
-0.3～+6.5
330(BR34E02FVT-W) ^*1
300(BR34E02NUX-W) ^*2
-65～+125
-40～+85
-0.3～10.0
-0.3～VCC+0.3
●Recommended operating conditions
Parameter
Supply Voltage
Input Voltage
Symbol
VCC
ＶIN
Rating
1.7～3.6
0～VCC
No.09002EAT03
VSON008X2030
●
Unit
V
mW
℃
℃
V
V
Unit
V
V
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© 2009 ROHM Co., Ltd. All rights reserved.
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2009.04 - Rev.A