BR34E02FVT-3 Datasheet, PDF (1/20 Pages) Rohm – Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules)

Memory for Plug & Play
DDR2/DDR3
SPD Memory (for Memory Modules)
BR34E02FVT-3,BR34E02NUX-3
No.11002EAT05
●Description
BR34E02-3 Series is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
●Features
1) 256×8 bit architecture serial EEPROM
2) Wide operating voltage range: 1.7V-5.5V
3) Two-wire serial interface
4) Self-Timed Erase and Write Cycle
5) Page Write Function (16byte)
6) Write Protect Mode
Settable Reversible Write Protect Function: 00h-7Fh
Write Protect 1 (Onetime Rom)
: 00h-7Fh
Write Protect 2 (Hardwire WP PIN)
: 00h-FFh
7) Low Power consumption
Write (at 1.7V ) : 0.4mA (typ.)
Read (at 1.7V ) : 0.1mA(typ.)
Standby ( at 1.7V ) : 0.1µA(typ.)
8) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
9) Compact package: TSSOP-B8, VSON008X2030
10) High reliability fine pattern CMOS technology
11) Rewriting possible up to 1,000,000 times
12) Data retention: 40 years
13) Noise reduction Filtered inputs in SCL / SDA
14) Initial data FFh at all addresses
●BR34E02-3 Series
Capacity
Bit format
2Kbit
256X8
Type
BR34E02-3
Power Source Voltage
1.7V～5.5V
TSSOP-B8
●
VSON008X2030
●
●Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature
Topr
Terminal Voltage (A0)
-
Terminal Voltage (etcetera)
-
* Reduce by 3.3mW(*1), 3.0 mW(*2)/C over 25C
-0.3～+6.5
V
330(BR34E02FVT-3) *1
mW
300(BR34E02NUX-3)*2
-65～+125
℃
-40～+85
℃
-0.3～10.0
V
-0.3～VCC+1.0
V
●Recommended operating conditions
Parameter
Symbol
Ratings
Unit
Supply Voltage
Input Voltage
VCC
1.7～5.5
V
VIN
0～VCC
V
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2011.11 - Rev.A