BR34E02-W Datasheet, PDF (1/20 Pages) Rohm – DDR/DDR2 (For memory module) SPD Memory

TECHNICAL NOTE
Double-cell Memory for Plug & Play
DDR/DDR2
(For memory module) SPD Memory
BR34E02-W
●Description
BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
●Features
・256×8 bit architecture serial EEPROM
・Wide operating voltage range: 1.7V-3.6V
・Two-wire serial interface
・High reliability connection using Au pads and Au wires
・Self-Timed Erase and Write Cycle
・Page Write Function (16byte)
・Write Protect Mode
Settable Reversible Write Protect Function: 00h-7Fh
Write Protect 1 (Onetime Rom)
: 00h-7Fh
Write Protect 2 (Hardwire WP PIN)
: 00h-FFh
・Low Power consumption
Write (at 1.7V ) : 0.4mA (typ.)
Read (at 1.7V ) : 0.1mA(typ.)
Standby ( at 1.7V ) : 0.1μA(typ.)
・DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
・Compact package: TSSOP-B8, VSON008X2030
・High reliability fine pattern CMOS technology
・Rewriting possible up to 1,000,000 times
・Data retention: 40 years
・Noise reduction Filtered inputs in SCL / SDA
・Initial data FFh at all addresses
●BR34E02-W Series
Capacity Bit format
2Kbit
256X8
Type
BR34E02-W
Power Source Voltage
1.7V～3.6V
TSSOP-B8
●
VSON008X2030
●
Ver.A Aug.2007