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BR24C21_09 Datasheet, PDF (1/23 Pages) Rohm – EDID Memory (For display)
Memory for Plug & Play
EDID Memory
(For display)
BR24C21,BR24C21F,BR24C21FJ,BR24C21FV,
BU9882-W,BU9882F-W,BU9882FV-W
No.09002EAT02
BR24C21,BR24C21F,BR24C21FJ,BR24C21FV
●Description
BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1TM/DDC2TM interfaces
for Plug and Play displays.
●Features
1) Compatible with both DDC1TM/DDC2TM
2) Operating voltage range: 2.5V to 5.5V
3) Page write function: 8bytes
4) Low power consumption
Active (at 5V) : 1.5mA (typ)
Stand-by (at 5V) : 0.1µA (typ)
5) Address auto increment function during Read operation
6) Data security
Write enable feature (VCLK)
Write protection at low Vcc
7) Various packages available: DIP-T8(BR24C21) / SOP8(BR24C21F) / SOP-J8(BR24C21FJ) / SSOP-B8(BR24C21FV)
8) Initial data=FFh
9) Data retention: 10years
10) Rewriting possible up to 100,000 times
●Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
-0.3~+6.5
V
800 (DIP-T8)
*1
Power Dissipation
Pd
450 (SOP8)
*2
450 (SOP-J8) *3
mW
350 (SSOP-B8) *4
Storage Temperature
Tstg
-65~+125
℃
Operating Temperature
Topr
-40~+85
℃
Terminal Voltage
-
-0.3~VCC+0.3
V
* Reduce by 8.0 mW/C over 25C (*1), 4.5mW/℃ (*2,3), and 3.5mW/℃ (*4)
●Memory cell characteristics
Parameter
Supply Voltage
Input Voltage
Symbol
VCC
VIN
Rating
Unit
2.5~5.5
V
0~VCC
V
●Recommended operating conditions
Parameter
Write/Erase Cycle
Data Retention
Min.
100,000
10
Limits
Typ.
-
-
Max.
-
-
Unit
Cycle
Year
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2009.04 - Rev.A