BR24C01A-W Datasheet, PDF (1/13 Pages) Rohm – I2C BUS compatible serial EEPROM

Memory ICs
BR24C01A-W / BR24C01AF-W / BR24C01AFJ-W / BR24C01AFV-W / BR24C02-W / BR24C02F-W /
BR24C02FJ-W / BR24C02FV-W / BR24C04-W / BR24C04F-W / BR24C04FJ-W / BR24C04FV-W
I²C BUS compatible serial EEPROM
BR24C01A-W / BR24C01AF-W / BR24C01AFJ-W /
BR24C01AFV-W / BR24C02-W / BR24C02F-W /
BR24C02FJ-W / BR24C02FV-W / BR24C04-W /
BR24C04F-W / BR24C04FJ-W / BR24C04FV-W
The BR24C01A-W, BR24C02-W, and BR24C04-W series are 2-wire (I²C BUS type) serial EEPROMs which are
electrically programmable.
∗ I²C BUS is a registered trademark of Philips.
!Applications
VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches
!Features
1) 128×8bits (1k) serial EEPROM.
(BR24C01A-W / AF-W / AFJ-W / AFV-W)
256×8bits (2k) serial EEPROM.
(BR24C02-W / F-W / FJ-W / FV-W)
512×8bits (4k) serial EEPROM.
(BR24C04-W / F-W / FJ-W / FV-W)
2) Two wire serial interface.
3) Operating voltage range : 2.7V∼5.5V
4) Low current consumption
Active (at 5V) : 1.5mA (Typ.)
Standby (at 5V) : 0.1µA (Typ.)
5) Auto erase and auto complete functions can be used
during write operations.
6) Page write function.
BR24C01A-W / AF-W / AFJ-W / AFV-W : 8 bytes
BR24C02-W / F-W / FJ-W / FV-W : 8 bytes
BR24C04-W / F-W / FJ-W / FV-W : 16 bytes
7) DATA security
Write protect feature
Inhibit to WRITE at low VCC
8) Noise filters at SCL and SDA pins.
9) Address can be incremented automatically during
read operations.
10) Compact packages.
11) Rewriting possible up to 100,000 times
12) Data can be stored for ten years without corruption.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Applied voltage
Power dissipation
VCC
−0.3~+6.5
V
300(SSOP−B8)
∗1
Pd
450(SOP8, SOP−J8) ∗2
mW
800(DIP8)
∗3
Storage temperature
Tstg
−65~+125
°C
Operating temperature
Topr
−40~+85
°C
Input voltage
−
−0.3~VCC+0.3
V
∗1 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
∗2 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
∗3 Reduced by 8.0mW for each increase in Ta of 1°C over 25°C.