BM60210FV-C Datasheet, PDF (1/27 Pages) Rohm – High Voltage High & Low-side, Gate Driver

Datasheet
1200V High Voltage
High & Low-side, Gate Driver
BM60210FV-C
General Description
The BM60210FV-C is a monolithic high and low side
gate drive IC, which can be drive high speed power
MOSFET and IGBT driver with bootstrap operation.
The floating channel can be used to driven an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 1200V.
It incorporates the fault signal output functions,
Under-voltage Lockout (UVLO) function and Miller clamp
function.
Key Specifications
 High-side floating supply voltage:
1200V
 Output voltage range:
10V to 24V
 Min Output Current:
3A
 Turn ON/Off time:
75ns(Max)
 Delay Matching:
25ns(Max)
 Minimum input pulse width:
60ns(Max)
 Operating temperature range: -40°C to 125°C
Features
 Floating Channels for Bootstrap Operation to +1200V.
 Gate drive supply range from 10V to24V
 Built-in Under Voltage Lockout for Both Channels
 3.3V and 5.0V Input Logic Compatible
 Active Miller Clamping
 AEC-Q100 Qualified ^{(Note 1)}
(Note 1:Grade1)
Package
SSOP-B20W
W(Typ) x D(Typ) x H(Max)
6.50mm x 8.10mm x 2.01mm
Applications
 MOSFET gate driver
 IGBT gate driver
Typical Application Circuits
VCCB
ENA
INA
INB
CVCCB
CVREG
GND1
ENA
INA
INB
VREG
VCCB
OUTBH
OUTBL
MCB
GND1
UVLO
Pulse
Generator
Regulator
Pre-
driver
+
2V -
S
Q
R
UVLO
Pre-
driver
+
- 2V
NC
GND2
NC
VCCA
OUTAH
OUTAL
MCA
NC
GND2
NC
1pin
Up to 1200V
CVCCA
TO
LOAD
Figure 1. Typical Application Circuits
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TSZ02201-0818ABH00140-1-2
19. Feb. 2016 Rev.001