BM60055FV-C Datasheet, PDF (1/41 Pages) Rohm – 1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage

Datasheet
1ch Gate Driver Providing Galvanic Isolation
2500Vrms Isolation Voltage
BM60055FV-C
General Description
The BM60055FV-C is a gate driver with an isolation
voltage of 2500Vrms, I/O delay time of 250ns, minimum
input pulse width of 170ns. It incorporates the fault signal
output function (FLT_UVLO, FLT_SC, FLT_OT), under
voltage lockout (UVLO) function, short circuit protection
(SCP) function, over temperature protection (OT)
function, over current protection (OC) function, Soft turn
off function, 2 level turn off function, active miller
clamping function, switching controller function and
output state feedback function.
Key Specifications
Isolation Voltage:
Maximum Gate Drive Voltage:
I/O Delay Time:
Minimum Input Pulse Width:
2500 [Vrms] (Max)
24 [V] (Max)
250 [ns] (Max)
170 [ns] (Max)
Package
SSOP-B28W
W(Typ) x D(Typ) x H(Max)
9.2mm x 10.4mm x 2.4mm
Features
 Fault Signal Output Function
 Under Voltage Lockout Function
 Short Circuit Protection Function
 Over Current Protection Function
 Over Temperature Protection
 Temperature Compensation of OC
 Soft Turn Off Function of SCP
 2 Level Turn Off Function
 Active Miller Clamping
 Switching Controller
 Output State Feedback Function
 AEC-Q100 Qualified ^{(Note 1)}
(Note 1:Grade1)
Applications
 Automotive isolated IGBT/MOSFET inverter
gate drive.
 Automotive DC-DC converter.
 Industrial inverters system.
 UPS system.
Typical Application Circuit
ECU
V_BA TT
Rec tifier
/ Ripple f ilter
GND1
VC C 2
Rec tifier
/ Ripple f ilter
GND2
Snubber
GND1
FLT_UVL O
INB
INA
OSFB
FLT_OT
FLT_SC
FB
COMP
V_BATT
VREG
FET_G
SENSE
GND1
GND1
OSC
FLT
RESE T OSC
OSFB
LOGIC
T IMER
QS
R
DAC
-
++
-
+
REGULATOR
OSC
QS
R
SLOP E
OSC
T IMER
T IMER
MAX.Dut y
UVLO_ BATT
LOGIC
PRE
DRIVER
2 level T urn
off Contol
Filter
Filter
CURRENT
SOURCE
T emp
Compens ation
GND2
OUT2
OUT1
VCC2
PROOUT
TC
TO
TCOMP
RTOFF
LVOFF
SCPIN
OCIN
UVLOIN
GND2
VC C 2
Filter
Filter
GND2
Figure 1. Typical Application Circuit
〇Product structure : Silicon integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0818ABH00120-1-2
15.Feb.2016 Rev.001