BH6176GU Datasheet, PDF (1/5 Pages) Rohm – Silicon Monolithic Integrated Circuit

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Structure
Product
Type
Functions
Silicon Monolithic Integrated Circuit
Power Management LSI for MultiMedia LSI on Cellular
BH6176GU
・1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I2C)
・６-channel CMOS-type LDOs. (16 steps adjustable VO by I2C, 150mA×3, 300mA×３)
・LDO and Stepdown converter Power ON/OFF control enabled by I2C interface or external pin
・I2C compatible Interface. (Device address is “1001111”)
・Wafer Level CSP package(2.6mm×2.6mm) for space-constrained applications.
Absolute Maximum Ratings（Ta=25C）
Parameter
Symbol
Rating
Unit
Maximum Supply Voltage (VBAT, PBAT)
Maximum Supply Voltage (VUSB)
VBATMAX
6.0
V
VUSBMAX
6.0
V
Maximum Supply Voltage (DVDD)
DVDDMAX
4.5
V
Maximum Input Voltage 1
(LX, FB, OUT1, OUT2, OUT3, OUT4, OUT5, OUT6,
EN_LD1, EN_LD2, EN_LD3, EN_LD4)
Maximum Input Voltage 2
(NRST, CLK, DATA)
Power Dissipation
VINMAX1
VINMAX2
Pd
VBAT + 0.3
V
DVDD + 0.3
V
900*¹
mW
Operating Temperature Range
Storage Temperature Range
Topr
-35 ～ +85
℃
Tstg
-55 ～ +125
℃
*1 This is the allowable loss of when it is mounted on a ROHM specification board 60mm×60mm.
To use at temperature higher than 25C , derate 1% per 1C.
Recommended Operating Conditions (Ta=25C)
Parameter
Symbol
Range
Unit
VBAT, PBAT Voltage
VBAT
*² 2.20 ～ 5.50
V
VUSB Voltage
VUSB
*² 2.20 ～ 5.50
V
DVDD Voltage
VDVDD
*³ 1.70 ～ 4.20
V
*2 Whenever the VBAT or PBAT or VUSB voltage is under the LDO, SWREG output voltage,
the LDO and SWREG output is not guaranteed to meet its published specifications.
*3 The DVDD Voltage must be under the Battery Voltage VBAT, PBAT at any times.
*This product is not especially designed to be protected from radioactivity.
REV. A