BH6173GUL_11 Datasheet, PDF (1/5 Pages) Rohm – Silicon Monolithic Integrated Circuit

Structure
Product
Type
Functions
Silicon Monolithic Integrated Circuit
Power Management LSI for Multimedia LSI on Cellular
BH6173GUL
・1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable Vout by I2C)
・3-channel CMOS-type LDOs. (16 steps adjustable Vout by I2C)
・LDO and Stepdown converter Power ON/OFF control enabled by I2C interface
・I2C compatible Interface. (Selectable device address is “1001010”and “1001111”)
・Wafer Level CSP package(2.05mm×2.05mm) for space-constrained applications.
Absolute Maximum Ratings（Ta=25C）
Parameter
Symbol
Rating
Maximum Supply Voltage (VBAT1,PVCC, PBAT)
Maximum Supply Voltage (VIO)
Maximum Input Voltage 1
(LX, FB, OUT1, OUT2, OUT3, ADRS)
Maximum Input Voltage 2
(NRST, CLK, DATA)
Power Dissipation
VBATMAX
VIOMAX
VINMAX1
VINMAX2
Pd
6.0
4.5
VBAT + 0.3
VIO + 0.3
690*¹
Operating Temperature Range
Topr
-35 ～ +85
Storage Temperature Range
Tstg
-55 ～ +125
*1 This is the allowable loss of when it is mounted on a ROHM specification board 50mm×58mm.
To use at temperature higher than 25C , derate 1% per 1C.
Recommended Operating Conditions (Ta=25C)
Parameter
Symbol
Range
Unit
VBAT, PBAT Voltage
VBAT
*² 2.20 ～ 5.20
V
VIO Voltage
VIO
*³ 1.70 ～ 4.20
V
*2 Whenever the VBAT, PVCC and PBAT voltage is under the LDO, SWREG output voltage,
the LDO and SWREG output is not guaranteed to meet its published specifications.
*3 The VIO Voltage must be under the Battery Voltage VBAT, PBAT at any times.
*This product is not especially designed to be protected from radioactivity.
1/4
Unit
V
V
V
V
mW
℃
℃
REV. B