BH5510KVT Datasheet, PDF (1/4 Pages) Rohm – Silicon Monolithic Integrated Circuit

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Structure
Silicon Monolithic Integrated Circuit
Product series
Type
PWM Driver for combi drive
BH5510KVT
Function
特長
・Super silent spindle drive by S!PWM^×2 technology.
・Built in 2mode of spindle driver’s gain for low-speed stability rotation.
○Absolute maximum ratings
Parameter
Symbol
Limits
Unit
Power MOS supply voltage
PVcc
6
V
Control circuit power supply voltage
Vcc
6
V
Maximum driver output current
IoMAX
3 ＃1
A
Power dissipation
Pd
1.37 ＃2
W
Operating temperature range
Topr
-40～85
℃
Storage temperature range
Tstg
-55～150
℃
Joint part temperature
Tjmax
150
℃
#1 The current is guaranteed 3.0A in case of the current is turned on/off in a duty-ratio of less than 1/10 with a maximum
on-time of 5msec and when short brake.
#2 PCB (70mm×70mm×1.6mm,occupied copper foil is less than 3%,glass epoxy standard board) mounting.
Reduce power by 11.0mW for each degree above 25℃.
○Recommended operating conditions(Ta=-10～+70℃)
〔Set the power supply voltage taking allowable dissipation into considering〕
Parameter
Symbol
MIN. TYP. MAX.
Unit
Power MOS supply voltage
PVcc
3.0
5.0
5.5
V
Control circuit power supply voltage
Vcc
4.0
5.0
5.5
V
This product isn’t designed for protection against radioactive rays.
Status of this document
The Japanese version of this document is the formal specification.
A customer may use this translation version only for a reference to help reading the formal version.
If there are any differences in translation version of this document , formal version takes priority.
REV. A