BDJ0901HFV-TR Datasheet, PDF (1/17 Pages) Rohm – Temperature Sensor ICs Low current Thermostat Output

Datasheet
Temperature Sensor ICs
Low current Thermostat Output
BDJxxx1HFV Series
General Description
BDJxxx1HFV series is a thermostat output temperature
sensor IC with built-in temperature detection element,
constant current circuit, and a high-accuracy reference
voltage source in one chip. Temperature detection can
be realized at ±2.5°C accuracy without the need for a
complicated design. It is the best suited for portable
equipment of micro- and low-current, power down
function, and battery drive. It is possible to use it for a
wide range of applications such as heat detection and
temperature monitors because it provides an analog
output in addition to the thermostat power output.
BDJxxx1HFV series has 6 products at 60°C, 70°C,
75°C, 80°C, 85°C and 90°C detection temperature.
Features
 Detection Temperature lineup at 60°C, 70°C, 75°C,
80°C, 85°C, 90°C (6 products)
 Built-in power down control function.
(Min PD interface Voltage is 1.5V)
 Low thermal resistance package (Typ 187°C/W)
 ESD Rating of 8kV (HBM)
 OS Output Active H
Applications
Cellular Phone, Digital Camera, Thermal Protection for
Electrical Equipment (Notebook PC, FPD-TV, etc.)
Key Specifications
 Power Supply Voltage Range:
2.4V to 5.5V
 Supply Current:
Normal Function mode
7.5µA (Typ)
Power Down mode
0.3µA (Typ)
 High Accuracy Thermostat:
±2.5°C (Max) @Ta=60°C to +90°C
 Sensing Temperature Hysteresis: 10.0°C (Typ)
 High Accuracy Analog Output:
±2.5°C (Max) @Ta=-30°C to +100°C
 Analog Output Temperature Sensitivity:
-8.2 mV/°C (Typ)
 Operating Temperature Range: -30°C to +100°C
Package
W(Typ) x D(Typ) x H(Max)
HVSOF5
1.60mm x 1.60mm x 0.60mm
Typical Application Circuit
Please adjust capacitor according to the noise
condition of the set.
TEMP
0.1µF
1
GND C
2
PD
3
PD
IREF
VREF
TEMP
SENSOR
VDD
5
+
-
OS
4
C
1µF ^{Please adjust bypass}
Capacitor according to
the noise condition of the
set.
Please pull-up of over 10kΩ for
the OS output terminal.
○Product structure：Silicon monolithic integrated circuit
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TSZ22111・14・001
○This product has no designed protection against radioactive rays
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TSZ02201-0M2M0F515120-1-2
06.Nov.2015 Rev.001