BD9070FP Datasheet, PDF (1/6 Pages) Rohm – Silicon Monolithic Integrated Circuit

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STRUCTURE
TYPE
Silicon Monolithic Integrated Circuit
Step-down Switching Regulator Integrated High Side Switch
PRODUCT SERIES
BD9070FP
FEATURES
・Integrated FET 1ch Step-down Switching Regulator
・1ch High Side Switch
・Over Voltage Protection which can be Variable by External Resisters
・Over Current Protection for Switching Regulator
・Over Current Protection for High Side Switch
・Thermal Shut Down Circuit
・Under Voltage Lock Out Circuit
・Over Current Detection Flag pin for High Side Switch
◎ABSOLUTE MAXIMUM RATINGS（Ta＝25℃））
Parameter
Symbol
Limits
Unit
Supply Voltage
VIN
36
V
SW Pin Voltage
Output SW Current
VSW
VIN
V
ISW
2.1^{（1）}
A
EN, SYNC Pin Voltage
VEN/SYNC
VIN
V
RT, FB, INV Pin Voltage
VRT, VFB, VINV
7
V
VDD Input Voltage
VDD
15
V
HSDSW Control Voltage
HSDCTL
VDD
V
HSDSW Flag Voltage
HSDFLG
6
V
Over Voltage Protection Detection Terminal OVPDET
6
V
Power Dissipation
Pd
1.45^{（2）}
W
Operating Temperature Range
Topr
-40～+105
℃
Storage Temperature Range
Tstg
-55～+150
℃
Maximum Junction Temperature
Tjmax
150
℃
（1）However ,do not exceed Pd.
（2）Pd derated at 5.52mW/℃ for temperature above Ta=25℃, Mounted on a double layer PCB 70mm×70mm×1.6mm.
(with Thermal vias / Copper area：70mm×70mm)
◎OPERATING CONDITIONS （However、it does not guarantee the electric characteristic.）
Parameter
Symbol Min. Max.
Unit
Recommend Supply Voltage
VIN
7
35
Ｖ
Recommend Supply Voltage 2
VDD
2.7
5.5
V
High Side Switch Current
IHSW
-
0.7
A
Output Switch Current
ISW
-
2
A
Oscillator Frequency
FOSC
50
500
kHz
External Synchronous Frequency
FSYNC
FOSC 500^{（3）}
kHz
（3）However, do not exceed OSC×1.5.
＊The product is not designed for protection against radioactive rays
REV. A