BD8311NUV_15 Datasheet, PDF (1/25 Pages) Rohm – Integrated 2.5A MOSFET 1ch Boost Converter

Datasheet
3.5V to 11V, Integrated 2.5A MOSFET 1ch
Boost Converter
BD8311NUV
General Description
BD8311NUV is a high-efficiency step-up switching
regulator with built-in power MOSFET that can output
8V or 10V from a 4-battery voltage supply such as
Li2cell or a 5V fixed power supply line. The built-in
80mΩ N-Channel FET switch is capable of handling
output current up to 2.5A. This IC has a flexible phase
compensation system and a switching frequency of
1.2MHz allowing the use of smaller external output
inductor and capacitor making the construction of a
compact power supply really easy.
Key Specification
 Input Voltage Range:
 Output Voltage Range:
 FET Maximum Current:
 Switching Frequency:
 Nch FET ON-Resistance:
 Standby Current:
 Operating Temperature Range:
+3.5V to +11.0V
+4.0V to +11.0V
2.5A
1.2MHz(Typ)
80mΩ(Typ)
0μA (Typ)
-25°C to +85°C
Package
W (Typ) x D (Typ) x H (Max)
Features
 Built-In 2.5A/14V N-Channel FET Switch
 On-Chip Phase Compensation
Between Input and Output of ERROR AMP.
 Output Current:
 600mA at 10V (3.5V to 10V input)
 800mA at 8V (3.5V to 8V input)
 Built-In Soft-Start Function.
 Built-In Timer Latch System for Short Circuit
Protection Function.
Application
General Portable Equipment like DSC/DVC Powered
by 4 dry Batteries or Li2cell
Typical Application Circuit
Input: 3.5V to 10V, Output: 10V / 500 mA
1₁0₀V_V/_/5₅₀0₀0_mm_AA
RSX2R0S1XL20-31L0-3(R0 (ORHOHMM) )
2222µμFF
GGRMM3322EEBB313C12C226K2E61K6E( M16ura(Mta)urata)
6 ^PGNNDD
1¹0⁰p^pF
200k2Ω00k
OONN/O/OFFF
10kΩ^10k
22kΩ^22k
1¹0⁰0⁰k^kΩ
7 ^PGNNDD
8 ^STB
9 INV
10 ^SWOOUUTT
VSON010V3030
3.00mm x 3.00mm x 1.00mm
LXLx ₅
LXLx ₄
VVRREEGG ₃
VVCCCC ₂
GGNNDD 1
4.77µμHH
DEE33551188EE( T(OTKOOK)O)
VB^３AT^.5=2^V.5^t~^o 4¹.⁰5V^V
1⁰0^µμ^FF
1µμFF
GRGMRM3311CCBB311EE110066KKA7A57L5( ML(uMrautar)ata)
GGRRM118888BB11A11A0150K5AK61A(6M1u(rMatau)rata)
11μµF
G_GR_RM_M2₂1₁B_BB_B1₁1₁C_C1₁0₀5₅K_KA_A0₀1₁(₍M_Mu_ur_ra_ata_ta)₎
3.3₃~_.55_V.0V_{to 10 V}
Figure 1. Typical Application Circuit
○Product structure：Silicon monolithic integrated circuit
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TSZ22111・14・001
○This product has no designed protection against radioactive rays
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TSZ02201-0Q3Q0NZ00350-1-2
17.Feb.2015 Rev.002