BD8306MUV Datasheet, PDF (1/29 Pages) Rohm – Integrated 2.0A MOSFET 1ch Buck-Boost Converter

Datasheet
1.8V to 5.5V, Integrated 2.0A MOSFET 1ch
Buck-Boost Converter
BD8306MUV
General Description
ROHM’s highly-efficient buck-boost converter
BD8306MUV produces buck-boost output voltage
including 3.3 V from two-cell or three-cell alkaline
battery, or one-cell lithium-ion battery with just one
inductor. This IC adopts the original buck-boost drive
system and creates a more efficient power supply than
the conventional SEPIC-system or H-bridge system
switching regulators.
Features
 Highly-Efficient Buck-Boost DC/DC Converter
Constructed with just one Inductor.
 Maximum output current changes depending on the
input and output voltages. Input current for PVCC
terminal should be less than 2.0A including the DC
current and ripple current of the inductor. Please
refer to Figure 25 and Figure 34 for details about
the maximum output current at 3.3V and 5.0V
output.
 Incorporates a Soft-Start Function.
 Incorporates a Timer Latch System with Short
Protection Function.
Application
 General Portable Equipment
 DSC
 DVC
 Cellular Phone
 PDA
 LED
Typical Application Circuit
2.8V to 5.5V, Output: 3.3V / 1.0 A, Frequency 1MHz
1₁0₀µ_uFF_(c(_ec_re_ar_mam_ic)ic)
mmuurartaata
GRM31CB11A106KA01
2.8V2t.o8～55.5.5VV
12
11
10
R_RV_VCC_CC
0Ω0Ω
13
PVCC
14 VCC
Key Specifications
 Input Voltage Range:
+1.8V to +5.5V
 Output Voltage Range:
+1.8V to +5.2V
 Output Current:
(at 3.3V Output, +2.8V to +5.5V Input) 1.0A
(at 5.0V Output, +2.8V to +5.5V Input) 0.7A
 Pch FET ON-Resistance:
120mΩ(Typ)
 Nch FET ON-Resistance:
100mΩ(Typ)
 Standby Current:
0μA (Typ)
 Operating Temperature Range:
-40°C to +85°C
Package
W (Typ) x D (Typ) x H (Max)
VQFN016V3030
3.00mm x 3.00mm x 1.00mm
9
8
PGND
LXL2x2 7
44..77uµHH
TOKO DE3518C
ON/OFF
15 STB
R_RR_RT _T
3399kkΩΩ
16 ^RT
1
2
C^CV^VC^CC^C
1µ¹F^uF
CCFBFB
2222000pFF
RRFBFB4.47.7kkΩΩ
LXL2x2 ₆
VOUT
5
3
4
10₁µ₀F_uF(c_(ce_er_ra_am_mi_icc₎)
mmuruaratata
GRM31CB11A106KA01
3.3V/1.0A
RRINNVV11
565k6ΩkΩ
R_RIN_INV_V2 ₂
1100kkΩΩ
CCCC
1120ppFF
RRCC
44..7kΩΩ
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
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TSZ02201-0Q3Q0NZ00340-1-2
10.Aug.2016 Rev.003