BD8222EFV Datasheet, PDF (1/5 Pages) Rohm – Silicon Monolithic Integrated Circuit

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Structure

Product Series

type

Feature
É¿
Silicon Monolithic Integrated Circuit
É¿
Power Driver for Compact disc player
É¿
̛̗̙̫̔̎̎̎̚
É¿
ɾ4CH BTL Driver.
ɾEmploys the HTSSOP-B24PIN power package for compaction.
ɾHas a wide dynamic range.ʢPowVcc1=8V, RL=8Ωɺ6.0̫(typ.)ʣ
ɾThe thermal shutdown circuit contained.
ɾSwitches CH2 input by Control input terminal(CNT).
ɾIncorporates mute function by CNT terminal and mute terminal.


˓Absolute maximum ratings(Ta=25ˆ)
Parameter
Symbol
Limits
Unit
Power supply voltage
PowVcc 1,PowVcc 2
15
Ì«
Input terminal
BIAS1, BIAS2, LDIN,
SLIN, IN1, IN3, IN4
PowVcc 2
Ì«
CNT terminal
CNT
PowVcc 2
Ì«
MUTE terminal
MUTE1,2, 3 4
PowVcc 2
Ì«
BIASSW terminal
BIASSW
PowVcc 2
Ì«
Power dissipation
Pd
1.1^*1
̬
4.0^*2
Operating temperature range
Topr
-40ʙ+85
ˆ
Storage temperature
Tstg
-55ʙ+150
ˆ
Junction temperature
Tjmax
+150
ˆ
*1 70mm×70mm×1.6mm, occupied copper foil is less than 3%,one layer substrate(back copper foil 0mm×0mm)
Reduce power by 8.8mW for each degree above 25ˆ.
*2 70mm×70mm×1.6mm, occupied copper foil is less than 3%,four layer substrate(back copper foil 70mm×70mm)
Reduce power by 32.0mW for each degree above 25ˆ.


˓Operating conditions
(Set the power supply voltage taking allowable dissipation into considering.)
PowVcc 1,2
4.5 ʙ 10ʢ̫ʣ
Please use it with PowVcc 1= PowVcc 2
Status of this document
The Japanese version of this document is the formal specification. A customer may use this translation version only for a reference to help reading the formal version.
If there are any differences in translation version of this document, formal version takes priority.
Be careful to handle because the content of the description of this material might correspond to the labor (technology in the design, manufacturing, and use) in foreign country exchange
and Foreign Trade Control Law.
A radiation is not designed.






















REV. A