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BD8113EFV Datasheet, PDF (1/5 Pages) Rohm – Silicon Monolithic Integrated Circuit | |||
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Structure
Silicon Monolithic Integrated Circuit
Product series
White LED driver for TFT back light
Type
BDï¼ï¼ï¼ï¼EFV
Function
ã»Integrated buck-boost current-mode DC/DC controller
Built-in OSC (external R), External synchronous mode
ã»Two integrated LED current driver channel ã»Built-in under-voltage lock out circuit (UVLO)
ï¼Set by a standard external R current.ï¼
ã»Built-in over-voltage protection circuit (OVP)
ã»PWM light modulation
ã»Built-in thermal shut down circuit (TSD)
ã»FAIL outputï¼self-diagnosis functionï¼
ã»Built-in over-current protection circuit (OCP)
ã»Built-in short detection circuit (SCP)
ã»Built-in LED open short detection circuit
ã»Oscillation frequency accuracy ±5%
âAbsolute maximum ratingsï¼Ta=25âï¼
Parameter
Power supply voltage
BOOT terminal voltage
SW,CS,OUTH terminal voltage
Between BOOT-SW terminal voltage
LED1ï½2 output voltage
Symbol
VCC
VBOOT
Vsw,VCS,VOUTH
VBOOT-SW
VLED1ï½2
Limits
Unit
36
V
41
V
36
V
7
V
36
V
VREG,OVP,OUTL,FAIL1,FAIL2,LEDEN,
ISET,VDAC,PWM,SS,COMP,RT,SYNC,EN
terminal voltage
VVREG,VOVP,VOUTL,VFAIL1, VFAIL2,VLEDEN,
VISET,VVDAC,VPWM,VSS,VCOMP,VRT,VSYNC,VEN
-0.3ï½7 < VCC
V
Power dissipation
Operating temperature range
Storage temperature range
LED maximum output current
Pd
Topr
Tstg
ILED
1.10 â»1
W
-40ï½+105
â
-55ï½+150
â
150 â»2â»3
mA
â»1 IC mounted on glass epoxy board measuring 70mmÃ70mmÃ1.6mm, power dissipated at a rate of 8.8mw/â at temperatures
above 25â.
â»2 Dispersion figures for LED maximum output current and VF are correlated. Please refer to data on separate sheet.
â»3 Amount of current per channel.
âOperating conditions (Ta=25â)
Parameter
Symbol
Target value
Unit
Power supply voltage
VCC
5.0ï½30
V
Oscillation frequency range
ï½OSC
250ï½600
kHz
External synchronization frequency range â»4 â»ï¼
ï½SYNC
foscï½600
kHz
External synchronization pulse duty range
ï½SDUTY
40ï½60
%
â»4 Connect SYNC to GND or OPEN when not using external frequency synchronization.
â»5 Do not switch between internal and external synchronization when an external synchronization signal is input to the device.
REV. E
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