BD6563FV-LB Datasheet, PDF (1/19 Pages) Rohm – Three-Channel Small Signal IGBT/MOSFET Gate Drivers

BD6563FV-LB
Datasheet
Small Signal IGBT/MOSFET Gate Driver Series
Three-Channel Small Signal
IGBT/MOSFET Gate Drivers
BD6563FV-LB
●General Description
BD6563FV-LB is 3-ch gate driver to drive gate of
IGBT/MOSFET from 5V input signals.
Output signals consist of each high side and low side
drive signals in order to make ON/OFF timing control
easy. 1 input signal generates 2 output signals which are
high side output and low side output signal for 1 channel
drive. High side output signal outputs "H" level and high
impedance and low side output signal outputs "L" signal
and high impedance.
●Features
 Three-Channel Gate Drivers
 Separated Turn ON and Turn OFF Output
●Key Specifications
 Output-side supply voltage(max.):
30V
 Input-side supply voltage:
3.0V to 5.5V
 Output peak current(≦1us):
±0.6A
 Input-Output delay time (at VDD=3.3V):380ns(Max.)
 Input-Output delay time (at VDD=5.0V):345ns(Max.)
 Operating temperature range: -25℃ to +125℃
●Package
SSOP-B16
W(Typ.) x D(Typ.) x H(Max.)
5.00mm x 6.40mm x 1.35mm
●Applications
 Low-side IGBT/MOSFET Gate Drive for DCDC
Converter
 Low-side IGBT/MOSFET Gate Drive for Inverter
●Typical Application Circuit
IN1, IN2, IN3
SSOP-B16
BD6563FV-LB
OUT_H1,
OUT_H2,
OUT_H3
OUT_L1,
OUT_L2,
OUT L3
Figure 1. Typical Application Circuit
○Product structure：Silicon monolithic integrated circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed protection against radioactive rays
1/16
TSZ02201-0717ABZ00030-1-2
13.JUL.2012 Rev.002