BD4222MUV Datasheet, PDF (1/5 Pages) Rohm – Silicon monolithic integrated circuit

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Structure
Product name
Model No.
Features
Silicon monolithic integrated circuit
Strobe capacitor charging control IC
ＢＤ４２２２ＭＵＶ
1. Built-in power transistor(45V DMOS)
2. Adjustable transformer primary-side peak current to linear current with the ADJ pin
3. Charging control switching with the START pin
4. Includes high precision full charge voltage detection circuit and output pin
5. Various built-in protective circuits (TSD, UVLO)
6. Built-in protective circuits (SDP)
7. Built-in IGBT driver(VDD supply for IGBT driver)
8. Employs small package: VQFN016V3030 (3.0 mm×3.0 mm×1.0 mm)
○ Absolute Maximum Ratings（Ta＝25℃）
Parameter
Symbol
Rating
Unit
VCC supply voltage
VCC
-0.3～7
V
VDD supply voltage
VDD
-0.3～7
V
SW pin
VSW
45
V
VC pin (DC characteristic)
VCDC
-15～50
V
Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN)
VI
-0.3～7
V
Operating temperature range
Topr
-35～+85
°C
Storage temperature range
Tstg
-55～+150
°C
Junction temperature
Tjmax
150
°C
Power dissipation
Pd
1770 *1
mW
○ Operating Conditions（Ta=25℃）
Parameter
Symbol
Rating
Unit
VCC supply voltage range
VCC
2.5～5.5
V
VDD supply voltage range
VDD
2.5～5.5
V
Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN)
VI
0～VCC
V
FULL pin input current range
VFULL
0～5.5
V
*1: Reduced by 14.16 mW/°C at Ta=25°C or more (When mounted on a 74.2 mm×74.2 mm×1.6 mm glass epoxy, 4-layer board:
Surface radiating copper foil of 6.28mm², copper foil laminated in each layer)
○ Outside marking and dimension (UNIT:mm)
BD4
222
LOT No.
Fig.1 Outside marking and dimension
REV. A