BD4220AMUV Datasheet, PDF (1/5 Pages) Rohm – Silicon monolithic integrated circuit

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Structure
Product name
Model No.
Features
Silicon monolithic integrated circuit
Strobe capacitor charging control IC
ＢＤ４２２０ＡＭＵＶ
1. Built-in power transistor(50V DMOS)
2. Adjustable transformer primary-side peak current to linear current with the ADJ pin
3. Charging control switching with the START pin
4. Includes high precision full charge voltage detection circuit and output pin
5. Various built-in protective circuits (TSD, UVLO)
6. Built-in protective circuits (SDP)
7. Built-in IGBT driver(VDD supply for IGBT driver)
8. Employs small package: VQFN016V3030 (3.0 mm×3.0 mm×1.0 mm)
○ Absolute Maximum Ratings（Ta＝25℃）
Parameter
Symbol
Rating
Unit
VCC supply voltage
VDD supply voltage
VCC
-0.3～7
V
VDD
-0.3～7
V
SW pin
VSW
50
V
VC pin (DC characteristic)
VCDC
-15～50
V
Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN)
VI
-0.3～7
V
Operating temperature range
Storage temperature range
Junction temperature
Power dissipation
Topr
-35～+85
°C
Tstg
-55～+150
°C
Tjmax
150
°C
Pd
1770 *1
mW
○ Operating Conditions（Ta=25℃）
Parameter
Symbol
Rating
Unit
VCC supply voltage range
VCC
2.5～5.5
V
VDD supply voltage range
VDD
2.5～5.5
V
Input pin voltage (START, ADJ, IGBT_IN, IGBT_EN)
VI
0～VCC
V
FULL pin input current range
VFULL
0～5.5
V
*1: Reduced by 14.16 mW/°C at Ta=25°C or more (When mounted on a 74.2 mm×74.2 mm×1.6 mm glass epoxy, 4-layer board:
Surface radiating copper foil of 6.28mm², copper foil laminated in each layer)
○ Outside marking and dimension (UNIT:mm)
B4 2
20A
LOT No.
Notes on this document
Fig.1 Outside marking and dimension
The Japanese version of this document is the formal specifications. The translated version of the document should be used for reference.
If there is any difference between the formal specifications and the translated version, the formal specifications shall take priority.
REV. A